Fully electrically read-write device out of a ferromagnetic semiconductor

摘要

We report the realization of a read-write device out of the ferromagneticsemiconductor (Ga,Mn)As as the first step to fundamentally new informationprocessing paradigm. Writing the magnetic state is achieved by current-inducedswitching and read-out of the state is done by the means of the tunnelinganisotropic magneto resistance (TAMR) effect. This one bit demonstrator devicecan be used to design a electrically programmable memory and logic device.